Física de nanomateriales electrónicos
Universidad Nacional Autónoma de México
Ciudad de México, MéxicoPublicaciones en colaboración con investigadores/as de Universidad Nacional Autónoma de México (12)
2024
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Additive Manufacturing of Zn-Doped ZrO2 Architectures
Advanced Engineering Materials, Vol. 26, Núm. 11
2021
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Formation of vacancy point-defects in hydroxyapatite nanobelts by selective incorporation of Fe3+ ions in Ca(II) sites. A CL and XPS study
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 271
2020
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Defect-related luminescence properties of hydroxyapatite nanobelts
Applied Materials Today, Vol. 21
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Hole-mediated ferromagnetism in GaN doped with Cu and Mn
Journal of Materials Science: Materials in Electronics, Vol. 31, Núm. 18, pp. 15070-15078
2018
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Surface Dielectric Tunnel Barrier Induced by Mn Doping in SnO2 Micro- and Nanostructures
Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 19
2017
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Interconfigurational and intraconfigurational transitions of Yb2+ and Yb3+ ions in hydroxyapatite: A cathodoluminescence study
Acta Materialia, Vol. 135, pp. 35-43
2016
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Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study
Semiconductor Science and Technology, Vol. 31, Núm. 5
2014
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Growth and characterization of Mn-doped In2O3 nanowires and terraced microstructures
Acta Materialia, Vol. 75, pp. 51-59
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On the thermal growth and properties of doped TiO2 and In2O3 elongated nanostructures and nanoplates
Physica B: Condensed Matter, Vol. 453, pp. 92-99
2013
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Growth and characterization of Mn doped SnO2 nanowires, nanobelts, and microplates
Journal of Physical Chemistry C, Vol. 117, Núm. 17, pp. 8997-9003
2011
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CL study of blue and UV emissions in β-Ga2O3 nanowires grown by thermal evaporation of GaN
Journal of Applied Physics, Vol. 110, Núm. 3
1998
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Analysis of Mexican obsidians by IBA techniques
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 136-138, pp. 888-892