CARLOS
DÍAZ-GUERRA VIEJO
Profesor titular de universidad
![Foto de CARLOS](/img/nophoto.png)
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Universidad Autónoma de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Autónoma de Madrid (14)
2008
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Shape-controlled synthesis and cathodoluminescence properties of elongated α -Fe2O3 nanostructures
Journal of Applied Physics, Vol. 104, Núm. 12
2007
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Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals
Journal of Physics D: Applied Physics
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Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys
AIP Conference Proceedings
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Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys
Thermophotovoltaic Generation of Electricity
2006
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Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method
Journal of Crystal Growth, Vol. 289, Núm. 1, pp. 18-23
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Solidification features of cast and vertically fed Te-doped GaSb materials
Journal of Crystal Growth, Vol. 293, Núm. 2, pp. 285-290
2005
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Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
Journal of Applied Physics, Vol. 97, Núm. 2
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Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
Applied Physics Letters, Vol. 86, Núm. 22, pp. 1-3
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Study of defects in InxGa1-xSb bulk crystals
Physica Status Solidi C: Conferences
2004
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Cathodoluminescence characterization of InGaSb crystals
Proceedings of the International Conference on Microelectronics
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Cathodoluminescence study of InxGa1-xSb crystals grown by the Bridgman method
Journal of Crystal Growth, Vol. 268, Núm. 1-2, pp. 52-58
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Electron-beam-induced current study of electrically active defects in 4H-SiC
Journal of Physics Condensed Matter
2003
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Defect assessment of Mg-doped GaN by beam injection techniques
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7470-7475
1996
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Homogeneity assessment of YBa2Cu3O7-x single crystals by cathodoluminescence microscopy
Journal of Applied Physics, Vol. 80, Núm. 2, pp. 998-1001