Publicaciones en las que colabora con GERMÁN GONZÁLEZ DÍAZ (28)

1999

  1. Electrical characterization of Si+ and Si+/P+ implanted N+P In0.53Ga0.47As junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 425-428

  2. Shallow junctions in p-In.53Ga.47As by ion implantation

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 147, Núm. 1-4, pp. 166-170

1996

  1. Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps

    Journal of Applied Physics, Vol. 79, Núm. 10, pp. 7830-7836

1995

  1. Growth of chalcopyrite Cu(In, Ga)Se2/Culn3Se5 absorbers by radio frequency sputtering

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

1994

  1. Stoichiometry control over a wide composition range of sputtered CuGa xIn(1-x)Se2

    Applied Physics Letters, Vol. 64, Núm. 10, pp. 1239-1241

1993

  1. Emission line intensities in an r.f. sputtering glow discharge system

    Thin Solid Films, Vol. 228, Núm. 1-2, pp. 133-136

1992

  1. Chalcopyrite CuGaxIn1-xSe2 semiconducting thin films produced by radio frequency sputtering

    Applied Physics Letters, Vol. 60, Núm. 15, pp. 1875-1877

  2. Optical analysis of absorbing thin films: Application to ternary chalcopyrite semiconductors

    Applied Optics, Vol. 31, Núm. 10, pp. 1606-1611

  3. Optical spectroscopic study of the growth dynamics of radio-frequency- sputtered YBa2Cu3O7-x thin films

    Applied Physics Letters, Vol. 61, Núm. 2, pp. 231-233

1990

  1. Barrier effects on ionic conductivity and dielectric response of Tl(NbTe)O6

    Solid State Ionics, Vol. 44, Núm. 1-2, pp. 131-137

  2. Dielectric response and ionic conductivity of Cs(NbTe)O6

    Materials Research Bulletin, Vol. 25, Núm. 11, pp. 1393-1399

  3. Electrical characterization of all-sputtered CdS/CuInSe2 solar cell heterojunctions

    Solar Cells, Vol. 28, Núm. 1, pp. 31-39

  4. Growth and physical properties of CuGaSe2 thin films by r.f. sputtering

    Journal of Materials Science Letters, Vol. 9, Núm. 2, pp. 237-240

  5. Ionic conductivity of lithium inserted Ba2YCu3O7-y

    Solid State Communications, Vol. 76, Núm. 7, pp. 917-920

  6. Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films

    Journal of Applied Physics, Vol. 68, Núm. 1, pp. 189-194

1989

  1. Role of deep levels and interface states in the capacitance characteristics of all-sputtered CuInSe2/CdS solar cell heterojunctions

    Journal of Applied Physics, Vol. 65, Núm. 8, pp. 3236-3241

  2. Substrate temperature effect on the optical properties of radio-frequency sputtered CulnSe2 thin films

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 7, Núm. 3, pp. 1424-1427

  3. Synthesis, characterization and ionic conductivity of Tl(NbTe)O6

    Solid State Ionics, Vol. 37, Núm. 1, pp. 87-93

1988

  1. Capacitance characterisation of Cu2S/CdS heterojunctions

    Semiconductor Science and Technology, Vol. 3, Núm. 8, pp. 781-785

  2. Effects of argon partial pressure and hydrogen admixtures on the properties of sputtered CuInSe2 thin films

    Applied Surface Science, Vol. 33-34, Núm. C, pp. 844-853