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DAVID
HERNÁNDEZ MALDONADO
Postdoctoral UCM
Publicacions (29) Publicacions de DAVID HERNÁNDEZ MALDONADO
2021
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Exfoliation of Alpha-Germanium: A Covalent Diamond-Like Structure
Advanced Materials, Vol. 33, Núm. 10
2020
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Interfacial-Redox-Induced Tuning of Superconductivity in YBa2Cu3O7-δ
ACS Applied Materials and Interfaces, Vol. 12, Núm. 4, pp. 4741-4748
2019
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Enhancement of Electrical Conduction and Phonon Scattering in Ga 2 O 3 (ZnO) 9 -In 2 O 3 (ZnO) 9 Compounds by Modification of Interfaces at the Nanoscale
Journal of Electronic Materials, Vol. 48, Núm. 4, pp. 1818-1826
2018
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Enhancing the thermoelectric power factor of Sr0.9Nd0.1TiO3 through control of the nanostructure and microstructure
Journal of Materials Chemistry A, Vol. 6, Núm. 48, pp. 24928-24939
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The association of hydrogen with nanometre bubbles of helium implanted into zirconium
Scripta Materialia, Vol. 152, pp. 102-106
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Utilising unit-cell twinning operators to reduce lattice thermal conductivity in modular structures: Structure and thermoelectric properties of Ga2O3(ZnO)9
Journal of Alloys and Compounds, Vol. 762, pp. 892-900
2017
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Atomically resolved chemical ordering at the nm-thick TiO precipitate/matrix interface in V-4Ti-4Cr alloy
Scripta Materialia, Vol. 126, pp. 50-54
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Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy
Nano Letters, Vol. 17, Núm. 7, pp. 4261-4269
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Reverse Monte Carlo reconstruction algorithm for discrete electron tomography based on HAADF-STEM atom counting
Journal of Microscopy, Vol. 265, Núm. 1, pp. 73-80
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Route to achieving perfect B-site ordering in double perovskite thin films
NPG Asia Materials, Vol. 9, Núm. 7
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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells
Applied Surface Science, Vol. 395, pp. 98-104
2016
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Cu atoms suppress misfit dislocations at the β″/Al interface in Al-Mg-Si alloys
Scripta Materialia, Vol. 110, pp. 6-9
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HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications
Microscopy and Microanalysis
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Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls
Applied Physics Letters, Vol. 108, Núm. 4
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Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
Journal of Applied Physics, Vol. 119, Núm. 10
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Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
Semiconductor Science and Technology, Vol. 31, Núm. 9
2015
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Determination of Local Chemistry Composition of Low-Dimensional Semiconductor Nanostructures Through the use of High-Resolution HAADF images
Microscopy and Microanalysis, Vol. 21, pp. 2083-2084
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HAADF-STEM atom counting in atom probe tomography specimens: Towards quantitative correlative microscopy
Ultramicroscopy, Vol. 159, pp. 403-412
2014
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Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN Multiquantum well system
Nano Letters, Vol. 14, Núm. 1, pp. 107-114
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HAADF-STEM and DFT investigations of the Zn-containing β'' phase in Al-Mg-Si alloys
Acta Materialia, Vol. 78, pp. 245-253