FRANCISCO DOMÍNGUEZ-ADAME ACOSTA-rekin lankidetzan egindako argitalpenak (16)

1993

  1. Cathodoluminescence and microRaman analysis of oxygen loss in electron irradiated YBa2Cu3O7-x

    Journal of Applied Physics, Vol. 74, Núm. 10, pp. 6289-6292

  2. Photoluminescence Studies of Heat-Treated GaP:S Samples

    Journal of the Electrochemical Society, Vol. 140, Núm. 12, pp. 3627-3630

  3. Scanning electron acoustic microscopy of Bi2Sr2CaCu2Ox

    Solid State Communications, Vol. 87, Núm. 9, pp. 843-845

  4. Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescence

    Materials Chemistry and Physics, Vol. 35, Núm. 2, pp. 126-128

  5. Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence

    Journal of Applied Physics, Vol. 74, Núm. 9, pp. 5726-5728

1992

  1. Luminescence from Bi2Sr2CaCu2Ox and YBa2Cu3O7-x films in the scanning electron microscope

    Journal of Applied Physics, Vol. 71, Núm. 6, pp. 2778-2782

1991

  1. Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence

    Journal of Applied Physics, Vol. 69, Núm. 1, pp. 502-504

  2. Local distribution of deep centers in GaP studied by infrared cathodoluminescence

    Applied Physics Letters, Vol. 58, Núm. 3, pp. 257-259

  3. Study of radiative transitions in the range 1.5-2.1eV in GaP

    Materials Chemistry and Physics, Vol. 28, Núm. 3, pp. 267-274

1990

  1. Composition dependence of cathodoluminescence emission of AlxGa1-xP

    Solid State Communications, Vol. 76, Núm. 2, pp. 195-196

1989

  1. Composite character of the red band emission in LEC GaP:S

    Materials Chemistry and Physics, Vol. 21, Núm. 5, pp. 539-542

  2. Scanning electron acoustic microscopy observations of twins and grain boundaries in III-V materials

    Journal of Applied Physics, Vol. 66, Núm. 6, pp. 2751-2753

1988

  1. Influence of vacancy defects on the luminescence of GaP studied by CL and positrons

    Solid State Communications, Vol. 67, Núm. 6, pp. 665-667

  2. SEM‐CL of reaction bonded SiC

    physica status solidi (a), Vol. 108, Núm. 1, pp. K81-K84

  3. Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

    Journal of Applied Physics, Vol. 64, Núm. 9, pp. 4466-4468

  4. Spatial distribution of vacancy defects in GaP wafers

    Journal of Applied Physics, Vol. 63, Núm. 8, pp. 2583-2585