Publicaciones en colaboración con investigadores/as de Indian Institute of Science Bangalore (4)

1996

  1. Nature of compensating luminescence centers in Te-diffused and -doped GaSb

    Journal of Applied Physics, Vol. 80, Núm. 2, pp. 1112-1115

  2. Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

    Journal of Applied Physics, Vol. 79, Núm. 6, pp. 3246-3252

1995

  1. Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide

    Applied Physics Letters, Vol. 67, Núm. 18, pp. 2648-2650

  2. P- to n-type conversion in GaSb by ion beam milling

    Applied Physics Letters, Vol. 67, pp. 3584