Publicacións en colaboración con investigadores/as de Universidad Politécnica de Madrid (19)

2024

  1. Optical, Electrical, and Optoelectronic Characterization of Ti-Supersaturated Gallium Arsenide

    Physica Status Solidi (A) Applications and Materials Science

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

2016

  1. Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 5

2015

  1. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  2. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  3. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  4. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

  5. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

    Applied Physics Letters, Vol. 103, Núm. 3

  6. Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  7. Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

    Journal of Applied Physics, Vol. 114, Núm. 5

  8. Study of the electrical behavior in intermediate band-Si junctions

    Materials Research Society Symposium Proceedings

  9. The Intermediate Band approach in the third solar cell generation context

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

    Solar Energy Materials and Solar Cells, Vol. 104, pp. 159-164

  2. Ion implantation and pulsed laser melting processing for the development of an intermediate band material

    AIP Conference Proceedings

  3. Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

    Applied Physics Letters, Vol. 101, Núm. 19

2006

  1. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  2. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4