Universidad de Valladolid-ko ikertzaileekin lankidetzan egindako argitalpenak (6)

2013

  1. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

2008

  1. Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

    Semiconductor Science and Technology, Vol. 23, Núm. 10

2006

  1. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  2. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

2005

  1. Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy

    Physica Status Solidi (A) Applications and Materials Science