Publicaciones en colaboración con investigadores/as de Stanford University (16)

1986

  1. Electronic structure of the Yb/Ge(111) interface

    Physical Review B, Vol. 33, Núm. 2, pp. 864-872

  2. Photoemission spectroscopy of Yb3Si5 and its connection with Si-Yb interfaces

    Physical Review B, Vol. 34, Núm. 6, pp. 4150-4154

  3. Photoemission studies of Si(1 1 1)-Yb interfaces: What can be learned from Yb mixed valence

    Solid State Communications, Vol. 60, Núm. 7, pp. 595-598

  4. Resonant photoemission at the 5p threshold in La, Pr, Sm and Tb

    Journal of Electron Spectroscopy and Related Phenomena, Vol. 41, Núm. 1, pp. 59-66

  5. Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfaces

    Surface Science, Vol. 168, Núm. 1-3, pp. 193-203

  6. Synchrotron radiation study of the photoionization cross sections for the whole valence band of 2H-MoS2

    Journal of Electron Spectroscopy and Related Phenomena, Vol. 40, Núm. 4, pp. 353-362

  7. X-ray absorption spectroscopy of platinum silicides: The L2,3 and M2,3 edges of platinum

    Thin Solid Films, Vol. 140, Núm. 1, pp. 105-114

1985

  1. A comparison between X-ray absorption spectroscopy and Bremsstrahlung Isochromat Spectroscopy: The empty states of Pd-Al alloys and Pd2Si

    Zeitschrift für Physik B Condensed Matter, Vol. 59, Núm. 2, pp. 159-165

  2. Changes in O2 and CO surface chemistry with increasing carbon concentration on W(100)

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 3, Núm. 3, pp. 1517-1520

  3. Gold at the Si(111)-Pd interface; modification of atomic interdiffusion

    Journal of Electron Spectroscopy and Related Phenomena, Vol. 35, Núm. 2, pp. 289-297

  4. PHOTOELECTRON SPECTROSCOPY OF THE Si/Eu INTERFACE USING SYNCHROTRON RADIATION.

    Proceedings of the 17th International Conference on the Physics of Semiconductors.

  5. Solid-state effects in photoionization cross sections of d states: Comparison between MoS2 and Mo

    Physical Review B, Vol. 32, Núm. 8, pp. 5459-5461

  6. Summary Abstract: The silicon/gadolinium interface at room temperature

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 3, Núm. 3, pp. 972-973

  7. Surface and bulk valence in Yb3Si5

    Physica B+C, Vol. 130, Núm. 1-3, pp. 141-143