Proyecto de I+D
Project TEC2017-84378-R FIRMOS
Fotodetectores para infrarrojo cercano y medio basados en semiconductores hiperdopados compatibles con tecnología CMOS
date_range
Duration: from 01 January 2018 to 30 September 2021
(45 months)
Finished
euro
231,110.00 EUR
Of Local scope. It has been granted under a regime of Competitive.
Subprogram:
Migración de Proyectos GUAI (desde 2000)
Researchers
Publications related to the project
Show by type2023
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High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
Materials Science in Semiconductor Processing
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology
2022
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On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials