Física de Materiales
Departament
Enrique
Calleja Pardo
Publicacions en què col·labora amb Enrique Calleja Pardo (10)
2018
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Effect of different buffer layers on the quality of InGaN layers grown on Si
AIP Advances, Vol. 8, Núm. 10
2007
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Crystal damage assessment of Be+-implanted GaN by UV Raman scattering
Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2005
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Effect of the implantation temperature on lattice damage of Be +-implanted GaN
Semiconductor Science and Technology, Vol. 20, Núm. 5, pp. 374-377
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Raman-scattering study of the InGaN alloy over the whole composition range
Journal of Applied Physics, Vol. 98, Núm. 1
2004
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Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy
Applied Physics Letters, Vol. 84, Núm. 6, pp. 897-899
2003
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Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy
Materials Research Society Symposium - Proceedings
2002
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Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2000
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Wet etching of GaN grown by molecular beam epitaxy on Si(111)
Semiconductor Science and Technology, Vol. 15, Núm. 10, pp. 996-100