Improvement of SiNx:H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors

  1. Redondo, E.
  2. Mártil, I.
  3. González Díaz, G.
  4. Fernández, P.
  5. Cimas, R.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2002

Volume: 17

Issue: 7

Pages: 672-676

Type: Article

DOI: 10.1088/0268-1242/17/7/306 GOOGLE SCHOLAR
Data source: Scopus