Improvement of SiNx:H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors

  1. Redondo, E.
  2. Mártil, I.
  3. González Díaz, G.
  4. Fernández, P.
  5. Cimas, R.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 0268-1242

Argitalpen urtea: 2002

Alea: 17

Zenbakia: 7

Orrialdeak: 672-676

Mota: Artikulua

DOI: 10.1088/0268-1242/17/7/306 GOOGLE SCHOLAR
Datuen iturria: Scopus