Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

  1. Garcia, S.
  2. Mártil, I.
  3. Gonzalez Diaz, G.
  4. Castan, E.
  5. Dueñas, S.
  6. Fernandez, M.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1998

Volume: 83

Issue: 1

Pages: 600-603

Type: Article

DOI: 10.1063/1.366647 GOOGLE SCHOLAR
Data source: Scopus