Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

  1. Mártil, I.
  2. Del Prado, A.
  3. San Andrés, E.
  4. González Díaz, G.
  5. Martínez, F.L.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2003

Volume: 94

Issue: 4

Pages: 2642-2653

Type: Article

DOI: 10.1063/1.1592625 GOOGLE SCHOLAR
Data source: Scopus