Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

1. Mártil, I.
2. Del Prado, A.
3. San Andrés, E.
4. González Díaz, G.
5. Martínez, F.L.