A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

  1. Pérez, E.
  2. Dueñas, S.
  3. Castán, H.
  4. García, H.
  5. Bailón, L.
  6. Montero, D.
  7. García-Hernansanz, R.
  8. García-Hemme, E.
  9. Olea, J.
  10. González-Díaz, G.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550 0021-8979

Argitalpen urtea: 2015

Alea: 118

Zenbakia: 24

Mota: Artikulua

DOI: 10.1063/1.4939198 GOOGLE SCHOLAR