Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Blanco, N.
  5. Mártil, I.
  6. González-Díaz, G.
Zeitschrift:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Datum der Publikation: 2001

Ausgabe: 40

Nummer: 7

Seiten: 4479-4484

Art: Artikel

GOOGLE SCHOLAR
Datenquelle: Scopus