Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Blanco, N.
  5. Mártil, I.
  6. González-Díaz, G.
Journal:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Year of publication: 2001

Volume: 40

Issue: 7

Pages: 4479-4484

Type: Article

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Data source: Scopus