High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices

  1. Blanco, M.N.
  2. Redondo, E.
  3. Calle, F.
  4. Mártil, I.
  5. González-Díaz, G.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2000

Volume: 87

Issue: 7

Pages: 3478-3482

Type: Article

DOI: 10.1063/1.372369 GOOGLE SCHOLAR
Data source: Scopus