High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices

  1. Blanco, M.N.
  2. Redondo, E.
  3. Calle, F.
  4. Mártil, I.
  5. González-Díaz, G.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2000

Volumen: 87

Número: 7

Pages: 3478-3482

Type: Article

DOI: 10.1063/1.372369 GOOGLE SCHOLAR

Objectifs de Développement Durable

La source de données: Scopus