High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices
- Blanco, M.N.
- Redondo, E.
- Calle, F.
- Mártil, I.
- González-Díaz, G.
ISSN: 0021-8979
Année de publication: 2000
Volumen: 87
Número: 7
Pages: 3478-3482
Type: Article