High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices

  1. Blanco, M.N.
  2. Redondo, E.
  3. Calle, F.
  4. Mártil, I.
  5. González-Díaz, G.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2000

Alea: 87

Zenbakia: 7

Orrialdeak: 3478-3482

Mota: Artikulua

DOI: 10.1063/1.372369 GOOGLE SCHOLAR
Datuen iturria: Scopus