Depth profile study of Ti implanted Si at very high doses

  1. Olea, J.
  2. Pastor, D.
  3. Toledano-Luque, M.
  4. Mártil, I.
  5. Gonzlez-Daz, G.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2011

Alea: 110

Zenbakia: 6

Mota: Artikulua

DOI: 10.1063/1.3626466 GOOGLE SCHOLAR