Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering

  1. Rao, C.S.R.
  2. Sundaram, S.
  3. Schmidt, R.L.
  4. Comas, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1983

Volumen: 54

Número: 4

Pages: 1808-1815

Type: Article

DOI: 10.1063/1.332815 GOOGLE SCHOLAR
La source de données: Scopus