Hot carrier internal thermionic photoemission in pulsed CO2-laser-excited n+-p silicon junctions

  1. Encinas-Sanz, F.
Revue:
IEEE Journal of Quantum Electronics

ISSN: 0018-9197

Année de publication: 1997

Volumen: 33

Número: 12

Pages: 2203-2208

Type: Article

DOI: 10.1109/3.644103 GOOGLE SCHOLAR
La source de données: Scopus