Publicaciones en colaboración con investigadores/as de Universidade de Aveiro (20)

2024

  1. Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes(Scientific Reports, 10.1038/s41598-022-18121-y)

    Scientific Reports

2022

  1. Anisotropy of the Electric Field Gradient in Two-Dimensional α-MoO3 Investigated by57 Mn(57 Fe) Emission Mössbauer Spectroscopy

    Crystals, Vol. 12, Núm. 7

  2. Contactless doping characterization of Ga 2O 3 using acceptor Cd probes

    Scientific Reports, Vol. 12, Núm. 1

2019

  1. EU activation in β-Ga2O3 MOVPE thin films by ion implantation

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3097-Q3102

  2. Micro-opto-electro-mechanical device based on flexible β-Ga2O3 micro-lamellas

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3235-Q3241

  3. Probing surface states in C60 decorated ZnO microwires: Detailed photoluminescence and cathodoluminescence investigations

    Nanoscale Advances, Vol. 1, Núm. 4, pp. 1516-1526

2014

  1. Doping of Ga2O3 bulk crystals and NWs by ion implantation

    Proceedings of SPIE - The International Society for Optical Engineering

2013

  1. A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 306, pp. 201-206

  2. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    Physica Status Solidi (B) Basic Research, Vol. 250, Núm. 4, pp. 801-808

  3. Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, Núm. 4, pp. 667-672

2006

  1. High temperature annealing of rare earth implanted GaN films: Structural and optical properties

    Optical Materials

2000

  1. Microelectrical characterization of diamond films: An attempt to understand the structural influence on electrical transport phenomena

    Diamond and Related Materials, Vol. 9, Núm. 3, pp. 1061-1065

1999

  1. Characterisation of different habits in torch-flame-grown diamond and diamond-like films

    Diamond and Related Materials, Vol. 8, Núm. 7, pp. 1333-1341

1997

  1. Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire

    Journal of Luminescence, Vol. 72-74, pp. 696-700

1996

  1. Cathodoluminescence study of GaN epitaxial layers

    Materials Science and Engineering B, Vol. 42, Núm. 1-3, pp. 230-234

  2. Correlation between crystal structure, quality and luminescence in torch flame grown diamond films

    Diamond and Related Materials, Vol. 5, Núm. 10, pp. 1189-1194

1995

  1. CHARACTERIZATION OF FLAME GROWN DIAMOND FILMS BY LUMINESCENCE AND EPR

    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS

  2. Characterization of flame grown diamond films by luminescence and EPR

    Materials Research Society Symposium - Proceedings

1993

  1. Photoluminescence Studies of Heat-Treated GaP:S Samples

    Journal of the Electrochemical Society, Vol. 140, Núm. 12, pp. 3627-3630

  2. Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescence

    Materials Chemistry and Physics, Vol. 35, Núm. 2, pp. 126-128