GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
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Universidad Politécnica de Madrid
Madrid, EspañaPublications in collaboration with researchers from Universidad Politécnica de Madrid (29)
2017
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A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
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Vanadium supersaturated silicon system: a theoretical and experimental approach
Journal of Physics D: Applied Physics, Vol. 50, Núm. 49
2016
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Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
Journal of Physics D: Applied Physics, Vol. 49, Núm. 5
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films
Applied Physics Letters, Vol. 106, Núm. 18
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
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Meyer Neldel rule application to silicon supersaturated with transition metals
Journal of Physics D: Applied Physics, Vol. 48, Núm. 7
2014
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Multiphononon resonant Raman scattering in He+-implanted InGaN
Semiconductor Science and Technology, Vol. 29, Núm. 4
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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
Applied Physics Letters, Vol. 104, Núm. 21
2013
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Double ion implantation and pulsed laser melting processes for third generation solar cells
International Journal of Photoenergy, Vol. 2013
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Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Journal of Physics D: Applied Physics, Vol. 46, Núm. 13
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Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
Applied Physics Letters, Vol. 103, Núm. 3
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Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Journal of Applied Physics, Vol. 114, Núm. 5
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Study of the electrical behavior in intermediate band-Si junctions
Materials Research Society Symposium Proceedings
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The Intermediate Band approach in the third solar cell generation context
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon
Solar Energy Materials and Solar Cells, Vol. 104, pp. 159-164