Universidad Politécnica de Madrid-ko ikertzaileekin lankidetzan egindako argitalpenak (21)

2024

  1. Native Oxide Layer Role during Cryogenic-Temperature Ion Implantations in Germanium

    Physica Status Solidi (A) Applications and Materials Science

  2. Optical, Electrical, and Optoelectronic Characterization of Ti-Supersaturated Gallium Arsenide

    Physica Status Solidi (A) Applications and Materials Science

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

2016

  1. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

  2. Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 5

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

  3. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  2. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  3. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  4. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

  5. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

    Applied Physics Letters, Vol. 103, Núm. 3

  6. Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  7. Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

    Journal of Applied Physics, Vol. 114, Núm. 5

  8. Study of the electrical behavior in intermediate band-Si junctions

    Materials Research Society Symposium Proceedings

  9. The Intermediate Band approach in the third solar cell generation context

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

    Solar Energy Materials and Solar Cells, Vol. 104, pp. 159-164

  2. Ion implantation and pulsed laser melting processing for the development of an intermediate band material

    AIP Conference Proceedings