University of Bologna-ko ikertzaileekin lankidetzan egindako argitalpenak (15)

2014

  1. Hierarchical ZnGa 2 O 4 and Cr doped Zn 1-x MnxGa 2 O 4 nanostructures for room temperature light-emitting devices

    Materials Research Express, Vol. 1, Núm. 2

  2. β-Ga2O3nanowires for an ultraviolet light selective frequency photodetector

    Journal of Physics D: Applied Physics, Vol. 47, Núm. 41

2003

  1. Defect assessment of Mg-doped GaN by beam injection techniques

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7470-7475

  2. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN

    Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2341-2346

  3. Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

    Applied Physics Letters, Vol. 82, Núm. 13, pp. 2050-2052

2002

  1. Characterization of thin layers of n- and p-type GaN

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Electrical and optical characterization of GaN HVPE layers related to extended defects

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13095-13104

1998

  1. Analyses of compensation related defects in II-VI compounds

    Materials Research Society Symposium - Proceedings

  2. Deep energy levels in CdTe and CdZnTe

    Journal of Applied Physics, Vol. 83, Núm. 4, pp. 2121-2126

1997

  1. Investigation of deep energy levels in II-VI compounds

    Materials Research Society Symposium - Proceedings

1996

  1. Comparison of electrical and luminescence data for the A center in CdTe

    Applied Physics Letters, Vol. 69, Núm. 23, pp. 3510-3512

  2. Compensation and deep levels in II-VI compounds

    Materials Science and Engineering B, Vol. 42, Núm. 1-3, pp. 302-305

  3. Electrical and optical properties of defects by complementary spectroscopies

    Materials Research Society Symposium - Proceedings

1995

  1. The EL2 trap in highly doped GaAs:Te

    Journal of Applied Physics, Vol. 78, Núm. 11, pp. 6592-6595

1994

  1. Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level

    Journal of Applied Physics, Vol. 76, Núm. 2, pp. 987-992