Publicaciones en colaboración con investigadores/as de Universidade de Lisboa (50)

2024

  1. Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes(Scientific Reports, 10.1038/s41598-022-18121-y)

    Scientific Reports

2023

  1. Cd implantation in α-MoO3: An atomic scale study

    Physical Review Materials, Vol. 7, Núm. 3

2022

  1. Contactless doping characterization of Ga 2O 3 using acceptor Cd probes

    Scientific Reports, Vol. 12, Núm. 1

2021

  1. Crystal mosaicity determined by a novel layer deconvolution Williamson-Hall method

    CrystEngComm, Vol. 23, Núm. 10, pp. 2048-2062

  2. Local induction heating capabilities of zeolites charged with metal and oxide mnps for application in hdpe hydrocracking: A proof of concept

    Materials, Vol. 14, Núm. 4, pp. 1-15

2020

  1. Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

    Acta Materialia

  2. Estimating the uncertainties of strain and damage analysis by X-ray diffraction in ion implanted MoO3

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 478, pp. 290-296

  3. Induction heating in nanoparticle impregnated zeolite

    Materials, Vol. 13, Núm. 18

2019

  1. Engineering strain and conductivity of MoO 3 by ion implantation

    Acta Materialia, Vol. 169, pp. 15-27

  2. EU activation in β-Ga2O3 MOVPE thin films by ion implantation

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3097-Q3102

  3. Incorporation of Europium into GaN Nanowires by Ion Implantation

    Journal of Physical Chemistry C, Vol. 123, Núm. 18, pp. 11874-11887

  4. Micro-opto-electro-mechanical device based on flexible β-Ga2O3 micro-lamellas

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3235-Q3241

2018

  1. Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

    Surface and Coatings Technology, Vol. 355, pp. 50-54

  2. Spatially resolved optical activation of Eu ions by laser irradiation in implanted hexagonal MoO3 microrods

    Applied Physics Letters, Vol. 113, Núm. 3

2017

  1. Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 32

  2. Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates

    CrystEngComm, Vol. 19, Núm. 17, pp. 2339-2348

  3. Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires

    Journal of Luminescence, Vol. 191, pp. 56-60

2014

  1. Doping of Ga2O3 bulk crystals and NWs by ion implantation

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications

    Journal of Physics D: Applied Physics, Vol. 47, Núm. 35

  3. Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments

    Journal of Materials Science, Vol. 49, Núm. 3, pp. 1279-1285