Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
- Tran, T.T.
- Alkhaldi, H.S.
- Gandhi, H.H.
- Pastor, D.
- Huston, L.Q.
- Wong-Leung, J.
- Aziz, M.J.
- Williams, J.S.
Revista:
Applied Physics Letters
ISSN: 0003-6951
Any de publicació: 2016
Volum: 109
Número: 8
Tipus: Article