Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
- Tran, T.T.
- Alkhaldi, H.S.
- Gandhi, H.H.
- Pastor, D.
- Huston, L.Q.
- Wong-Leung, J.
- Aziz, M.J.
- Williams, J.S.
Revue:
Applied Physics Letters
ISSN: 0003-6951
Année de publication: 2016
Volumen: 109
Número: 8
Type: Article
