Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
- Tran, T.T.
- Alkhaldi, H.S.
- Gandhi, H.H.
- Pastor, D.
- Huston, L.Q.
- Wong-Leung, J.
- Aziz, M.J.
- Williams, J.S.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2016
Alea: 109
Zenbakia: 8
Mota: Artikulua
