Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

  1. Tran, T.T.
  2. Alkhaldi, H.S.
  3. Gandhi, H.H.
  4. Pastor, D.
  5. Huston, L.Q.
  6. Wong-Leung, J.
  7. Aziz, M.J.
  8. Williams, J.S.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2016

Volume: 109

Issue: 8

Type: Article

DOI: 10.1063/1.4961620 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus