Raman scattering study of undoped and As-doped GaN grown with different III/V ratios

  1. Ibá̃ez, J.
  2. Pastor, D.
  3. Alarcón-Lladó, E.
  4. Cuscó, R.
  5. Artús, L.
  6. Novikov, S.V.
  7. Foxon, C.T.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Argitalpen urtea: 2007

Alea: 22

Zenbakia: 10

Orrialdeak: 1145-1150

Mota: Artikulua

DOI: 10.1088/0268-1242/22/10/011 GOOGLE SCHOLAR
Datuen iturria: Scopus