Raman scattering study of undoped and As-doped GaN grown with different III/V ratios

  1. Ibá̃ez, J.
  2. Pastor, D.
  3. Alarcón-Lladó, E.
  4. Cuscó, R.
  5. Artús, L.
  6. Novikov, S.V.
  7. Foxon, C.T.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Année de publication: 2007

Volumen: 22

Número: 10

Pages: 1145-1150

Type: Article

DOI: 10.1088/0268-1242/22/10/011 GOOGLE SCHOLAR
La source de données: Scopus