IGNACIO
MARTIL DE LA PLAZA
Catedrático de universidad
Instituto de Ciencias de la Tierra Jaume Almera
Barcelona, EspañaPublications en collaboration avec des chercheurs de Instituto de Ciencias de la Tierra Jaume Almera (11)
2011
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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
Semiconductor Science and Technology, Vol. 26, Núm. 11
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Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
2010
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Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit
Materials Research Society Symposium Proceedings
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Ti-doped gallium phosphide layers with concentrations above the Mott limit
Materials Research Society Symposium Proceedings
2009
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Laser thermal annealing effects on single crystal gallium phosphide
Journal of Applied Physics, Vol. 106, Núm. 5
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Pulsed laser melting effects on single crystal gallium phosphide
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2007
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Isotopic study of the nitrogen-related modes in N+ -implanted ZnO
Applied Physics Letters, Vol. 90, Núm. 18
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Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
2003
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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023
2002
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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
International Journal of Modern Physics B
1995
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Electrical and optical characterisation of silicon and silicon/phosphorus implantsin InP doped with iron
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1203-1206