Publicaciones en las que colabora con GERMÁN GONZÁLEZ DÍAZ (46)

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

2022

  1. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

2016

  1. Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 5

2015

  1. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  2. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  3. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  4. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

  5. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

    Applied Physics Letters, Vol. 103, Núm. 3

  6. Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  7. Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

    Journal of Applied Physics, Vol. 114, Núm. 5

  8. Study of the electrical behavior in intermediate band-Si junctions

    Materials Research Society Symposium Proceedings

  9. Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

    Japanese Journal of Applied Physics, Vol. 52, Núm. 12

  10. The Intermediate Band approach in the third solar cell generation context

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

  2. Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

    Solar Energy Materials and Solar Cells, Vol. 104, pp. 159-164

  3. Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

    Journal of Applied Physics, Vol. 112, Núm. 11