DAVID
PASTOR PASTOR
Investigador contratado
Instituto de Ciencias de la Tierra Jaume Almera
Barcelona, EspañaPublications en collaboration avec des chercheurs de Instituto de Ciencias de la Tierra Jaume Almera (17)
2011
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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
Semiconductor Science and Technology, Vol. 26, Núm. 11
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Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
2010
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Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit
Materials Research Society Symposium Proceedings
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Ti-doped gallium phosphide layers with concentrations above the Mott limit
Materials Research Society Symposium Proceedings
2009
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Laser thermal annealing effects on single crystal gallium phosphide
Journal of Applied Physics, Vol. 106, Núm. 5
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Pulsed laser melting effects on single crystal gallium phosphide
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers
Semiconductor Science and Technology, Vol. 23, Núm. 10
2007
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Crystal damage assessment of Be+-implanted GaN by UV Raman scattering
Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73
2006
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Structural and optical properties of MOCVD InAIN epilayers
Materials Research Society Symposium Proceedings
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
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UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers
Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 440-444
2005
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Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy
Journal of Crystal Growth
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Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy
Physica Status Solidi (A) Applications and Materials Science
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Raman-scattering study of the InGaN alloy over the whole composition range
Journal of Applied Physics, Vol. 98, Núm. 1
2004
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Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy
Applied Physics Letters, Vol. 84, Núm. 6, pp. 897-899
2003
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Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy
Materials Research Society Symposium - Proceedings