Estructura de la Materia, Física Térmica y Electrónica

1999

1. New results on the halo structure of 8 B

   Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 452, Núm. 1-2, pp. 1-7

2. A non-fatal case of Mycoplasma pneumoniae pneumonia complicated by pulmonary thromboembolism

   Clinical Microbiology Newsletter, Vol. 21, Núm. 4, pp. 30-31

3. Air gap membrane distillation of sucrose aqueous solutions

   Journal of Membrane Science, Vol. 155, Núm. 2, pp. 291-307

4. Characterization of Mg+-implanted InP by Raman spectroscopy

   Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, Núm. 1-4, pp. 454-458

5. Cherenkov light based measurement of extensive air showers around the knee with the HEGRA experiment

   Nuclear Physics B - Proceedings Supplements, Vol. 75, Núm. 1-2, pp. 244-247

6. Cosmic ray proton spectrum determined with the imaging atmospheric Cherenkov technique

   Physical Review D - Particles, Fields, Gravitation and Cosmology, Vol. 59, Núm. 9

7. Determination of the spin of 31Ar

   Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 467, Núm. 3-4, pp. 194-198

8. Direct contact membrane distillation of sugar aqueous solutions

   Separation Science and Technology, Vol. 34, Núm. 9, pp. 1773-1801

9. Discrete breathers in dc-biased josephson-junction arrays

   Physical Review B - Condensed Matter and Materials Physics, Vol. 59, Núm. 21, pp. 13604-13607

10. Disorder and damage effects in SrRuO3 thin films

    Physica B: Condensed Matter, Vol. 259-261, pp. 938-939

11. Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268

12. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

13. Electrical characterization of Si+ and Si+/P+ implanted N+P In0.53Ga0.47As junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 425-428

14. Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6924-6930

15. Electron scattering by Ne, Ar and Kr at intermediate and high energies, 0.5-10 keV

    Journal of Physics B: Atomic, Molecular and Optical Physics, Vol. 32, Núm. 8, pp. 1783-1794

16. Electroosmotic transport through a cation-exchange membrane: Effect of the stirring on the dependence of the electroosmotic permeability on the temperature

    Journal of Colloid and Interface Science, Vol. 212, Núm. 1, pp. 65-73

17. Experimental and theoretical Stark width and shift parameters of neutral and singly ionized tin lines

    Journal of Physics B: Atomic, Molecular and Optical Physics, Vol. 32, Núm. 2, pp. 241-247

18. Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

    Thin Solid Films, Vol. 349, Núm. 1-2, pp. 135-146

19. Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 437-440

20. Gate quality of ex situ deposited Al/SiNx:H/n-In0.53Ga0.47As devices after rapid thermal annealing

    Semiconductor Science and Technology, Vol. 14, Núm. 7, pp. 628-631