Publicaciones (88) Publicaciones en las que ha participado algún/a investigador/a

2003

  1. β Decay of 49,50 Ar

    Physical Review C - Nuclear Physics, Vol. 67, Núm. 5, pp. 543141-543146

  2. Beta-decay properties of the neutron-rich 94-99 Kr and 142-147 Xe isotopes

    Nuclear Physics A, Vol. 714, Núm. 1-2, pp. 21-43

  3. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  4. A novel procedure for the optical characterization of solar concentrators

    Solar Energy, Vol. 75, Núm. 2, pp. 135-142

  5. A simple algorithm for the transport of gamma rays in a medium

    American Journal of Physics, Vol. 71, Núm. 1, pp. 38-45

  6. A study of the electric field distribution in erythrocyte and rod shape cells from direct RF exposure

    Physics in Medicine and Biology, Vol. 48, Núm. 11, pp. 1649-1659

  7. Beta-decay studies of r-process nuclides in the Sn-132 region

    PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE FISSION AND PROPERTIES OF NEUTRON-RICH NUCLEI

  8. Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469

  9. CCD aided steering for an atmospheric Cherenkov telescope

    Astroparticle Physics, Vol. 19, Núm. 4, pp. 495-511

  10. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641

  11. Combined effect of periodic gates and external fields on the diffusion coefficient of a single particle

    Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, Vol. 67, Núm. 1, pp. 5

  12. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  13. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  14. Coupling of valence particles/holes to 68,70Ni studied via measurements of the B(E2) strength in 67,69,70Ni and 71Cu

    Nuclear Physics A, Vol. 719, Núm. 1-4, pp. C213-C216

  15. Degradation of Instrumentation Amplifiers Due to the Nonionizing Energy Loss Damage

    IEEE Transactions on Nuclear Science

  16. Detection of TeV gamma-rays from the BL Lac 1ES 1959+650 in its low states and during a major outburst in 2002

    Astronomy and Astrophysics, Vol. 406, Núm. 1

  17. Discrete breathers in Josephson arrays

    Chaos, Vol. 13, Núm. 2, pp. 733-743

  18. Effects of pressure ratio and pressure difference on the gas permeation properties of rubbery and glassy membranes

    Journal of Polymer Engineering, Vol. 23, Núm. 3, pp. 209-223

  19. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290

  20. Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023