Departamento
Estructura de la Materia, Física Térmica y Electrónica
Publicaciones (88) Publicaciones en las que ha participado algún/a investigador/a
2003
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β Decay of
49,50
Ar
Physical Review C - Nuclear Physics, Vol. 67, Núm. 5, pp. 543141-543146
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Beta-decay properties of the neutron-rich 94-99 Kr and 142-147 Xe isotopes
Nuclear Physics A, Vol. 714, Núm. 1-2, pp. 21-43
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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A novel procedure for the optical characterization of solar concentrators
Solar Energy, Vol. 75, Núm. 2, pp. 135-142
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A simple algorithm for the transport of gamma rays in a medium
American Journal of Physics, Vol. 71, Núm. 1, pp. 38-45
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A study of the electric field distribution in erythrocyte and rod shape cells from direct RF exposure
Physics in Medicine and Biology, Vol. 48, Núm. 11, pp. 1649-1659
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Beta-decay studies of r-process nuclides in the Sn-132 region
PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE FISSION AND PROPERTIES OF NEUTRON-RICH NUCLEI
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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CCD aided steering for an atmospheric Cherenkov telescope
Astroparticle Physics, Vol. 19, Núm. 4, pp. 495-511
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Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641
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Combined effect of periodic gates and external fields on the diffusion coefficient of a single particle
Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, Vol. 67, Núm. 1, pp. 5
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Coupling of valence particles/holes to 68,70Ni studied via measurements of the B(E2) strength in 67,69,70Ni and 71Cu
Nuclear Physics A, Vol. 719, Núm. 1-4, pp. C213-C216
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Degradation of Instrumentation Amplifiers Due to the Nonionizing Energy Loss Damage
IEEE Transactions on Nuclear Science
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Detection of TeV gamma-rays from the BL Lac 1ES 1959+650 in its low states and during a major outburst in 2002
Astronomy and Astrophysics, Vol. 406, Núm. 1
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Discrete breathers in Josephson arrays
Chaos, Vol. 13, Núm. 2, pp. 733-743
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Effects of pressure ratio and pressure difference on the gas permeation properties of rubbery and glassy membranes
Journal of Polymer Engineering, Vol. 23, Núm. 3, pp. 209-223
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290
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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023