Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

  1. Plaza, J.L.
  2. Hidalgo, P.
  3. Méndez, B.
  4. Piqueras, J.
  5. Castaño, J.L.
  6. Diéguez, E.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 1999

Volumen: 198-199

Número: PART I

Pages: 379-383

Type: Article

DOI: 10.1016/S0022-0248(98)01100-2 GOOGLE SCHOLAR
La source de données: Scopus