Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature

  1. Peres, M.
  2. Lorenz, K.
  3. Alves, E.
  4. Nogales, E.
  5. Méndez, B.
  6. Biquard, X.
  7. Daudin, B.
  8. Víllora, E.G.
  9. Shimamura, K.
Journal:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Year of publication: 2017

Volume: 50

Issue: 32

Type: Article

DOI: 10.1088/1361-6463/AA79DC GOOGLE SCHOLAR
Data source: Scopus