Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature

  1. Peres, M.
  2. Lorenz, K.
  3. Alves, E.
  4. Nogales, E.
  5. Méndez, B.
  6. Biquard, X.
  7. Daudin, B.
  8. Víllora, E.G.
  9. Shimamura, K.
Revue:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Année de publication: 2017

Volumen: 50

Número: 32

Type: Article

DOI: 10.1088/1361-6463/AA79DC GOOGLE SCHOLAR
La source de données: Scopus