Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature

  1. Peres, M.
  2. Lorenz, K.
  3. Alves, E.
  4. Nogales, E.
  5. Méndez, B.
  6. Biquard, X.
  7. Daudin, B.
  8. Víllora, E.G.
  9. Shimamura, K.
Aldizkaria:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Argitalpen urtea: 2017

Alea: 50

Zenbakia: 32

Mota: Artikulua

DOI: 10.1088/1361-6463/AA79DC GOOGLE SCHOLAR
Datuen iturria: Scopus