Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation

  1. Hernández, S.
  2. Cuscó, R.
  3. Artús, L.
  4. Nogales, E.
  5. Martin, R.W.
  6. O'Donnell, K.P.
  7. Halambalakis, G.
  8. Briot, O.
  9. Lorenz, K.
  10. Alves, E.
Journal:
Optical Materials

ISSN: 0925-3467

Year of publication: 2006

Volume: 28

Issue: 6-7

Pages: 771-774

Type: Conference paper

DOI: 10.1016/J.OPTMAT.2005.09.021 GOOGLE SCHOLAR
Data source: Scopus