Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation

  1. Hernández, S.
  2. Cuscó, R.
  3. Artús, L.
  4. Nogales, E.
  5. Martin, R.W.
  6. O'Donnell, K.P.
  7. Halambalakis, G.
  8. Briot, O.
  9. Lorenz, K.
  10. Alves, E.
Revue:
Optical Materials

ISSN: 0925-3467

Année de publication: 2006

Volumen: 28

Número: 6-7

Pages: 771-774

Type: Communication dans un congrès

DOI: 10.1016/J.OPTMAT.2005.09.021 GOOGLE SCHOLAR