Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

  1. San Andrés, E.
  2. Del Prado, A.
  3. Martínez, F.L.
  4. Mártil, I.
  5. Bravo, D.
  6. López, F.J.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2000

Volume: 87

Issue: 3

Pages: 1187-1192

Type: Article

DOI: 10.1063/1.371996 GOOGLE SCHOLAR

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