Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

  1. San Andrés, E.
  2. Del Prado, A.
  3. Martínez, F.L.
  4. Mártil, I.
  5. Bravo, D.
  6. López, F.J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2000

Volumen: 87

Número: 3

Pages: 1187-1192

Type: Article

DOI: 10.1063/1.371996 GOOGLE SCHOLAR

Objectifs de Développement Durable