Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4

  1. Miranda, J.M.
  2. Vogt, A.
  3. Schussler, M.
  4. Shaalan, M.
  5. Matulionis, A.
  6. Sebastian, J.L.
  7. Hartnagel, H.L.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 0268-1242

Argitalpen urtea: 1998

Alea: 13

Zenbakia: 7

Orrialdeak: 833-836

Mota: Artikulua

DOI: 10.1088/0268-1242/13/7/002 GOOGLE SCHOLAR
Datuen iturria: Scopus